国家/地区 Malaysia（7）
关键词 CURRENTVOLTAGE CHAR.（2）
出版物 JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE（7）
出版时间 2013（7）
机构 UNIV TEKNOL .（5） UTM（2）
作者 ISMAIL R（7）

Perpendicular Electric Field Effect on Bilayer Graphene Carrier Statistic

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

SAEIDMANESH M, AHMADI MT, GHADIRY M, AKBARI E, KIANI MJ, ISMAIL R

The Effect of Interconnect on the Circuit Performance of 22 nm Graphene Nanoribbon Field Effect Transistor and MOSFET

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

JOHARI Z, HAMID FKA, AHMADI MT, HARUN FKC, ISMAIL R

Bilayer Graphene Nanoribbon Mobility Model in Ballistic Transport Limit

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

MOUSAVI SM, AHMADI MT, SADEGHI H, NILGHAZ A, KIANI MJ, ISMAIL R

Graphene Nanoribbon Field Effect Transistor Logic Gates Performance Projection

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

JOHARI Z, HAMID FKA, TAN MLP, AHMADI MT, HARUN FKC, ISMAIL R

Geometry Effect on Graphene Nanoscrolls Band Gap

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

HAMZAH MAN, JOHARI Z, HAMID FKA, AHMADI MT, ISMAIL R

Current-Voltage Characteristics of Bilayer Graphene Nanoribbon Field Effect Transistor

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

MOUSAVI SM, AHMADI MT, NILGHAZ A, SAMADI J, KIANI MJ, ANWAR S, ISMAIL R

Performance of Bilayer Graphene Nanoribbon Schottky Diode in Comparison with Conventional Diodes

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

RAHMANI M, AHMADI MT, ISMAIL R, GHADIRY MH