国家/地区 Japan（5） Korea（5）
关键词 GRAPHENE（3） BILAYER GRAPHENE（2）
出版物 JAPANESE JOURNAL OF.（3） NANO LETTERS（3）
出版时间 2016（2） 2017（2） 2018（2） 2019（2）
机构 TOHOKU UNIV（5） POHANG UNIV .（4）
作者 PARK GH（11）

Engineering Crossed Andreev Reflection in Double-Bilayer Graphene

NANO LETTERS

PARK GH, WATANABE K, TANIGUCHI T, LEE GH, LEE HJ

Dynamic Fluid-Like Graphene with Ultralow Frictional Molecular Bearing

ADVANCED MATERIALS

JEON I, PARK GH, WANG P, LI J, HUNTER IW, SWAGER TM

Edge-Limited Valley-Preserved Transport in Quasi-1D Constriction of Bilayer Graphene

NANO LETTERS

LEE H, PARK GH, PARK J, LEE GH, WATANABE K, TANIGUCHI T, LEE HJ

A table-top formation of bilayer quasi-free-standing epitaxial-graphene on SiC(0001) by microwave annealing in air

CARBON

KIM KS, PARK GH, FUKIDOME H, TAKASHI S, TAKUSHI I, FUMIO K, IWAO M, SUEMITSU M

The effects of graphene on the properties of acrylic pressure-sensitive adhesive

JOURNAL OF INDUSTRIAL ENGINEERING CHEMISTRY

PARK GH, KIM KT, AHN YT, LEE HI, JEONG HM

High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique

PROCEEDINGS OF THE IEEE

JUNG MH, PARK GH, YOSHIDA T, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M

Strong Proximity Josephson Coupling in Vertically Stacked NbSe2 - Graphene-NbSe2 van der Waals Junctions

NANO LETTERS

KIM M, PARK GH, LEE J, LEE JH, PARK J, LEE H, LEE GH, LEE HJ

Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing

JAPANESE JOURNAL OF APPLIED PHYSICS

KIM KS, PARK GH, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

High-performance self-aligned graphene transistors fabricated using contamination-and defect-free process

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M