国家/地区 India（9） Usa（6）
关键词 GRAPHENE（3） MULTILAYER GRAPHENE（2）
出版物 PHYSICAL REVIEW LET.（3） NANO LETTERS（2）
出版时间 2014（3） 2016（2） 2017（2） 2018（2） 2021（2）
机构 UNIV DELHI（7） UNIV TEXAS A.（3）
作者 PRASAD N（15）

Spatio-temporal Analysis of the Electric Field-Induced Solid-State Reduction Dynamics of Graphene Oxide Thin Films for Controlled Band-Gap Modulation

JOURNAL OF PHYSICAL CHEMISTRY C

PRASAD N, TANWAR S, MUKHOPADHYAY S, KUNDU T

Suppression of trap assisted non-geminate recombination by incorporation of multilayer graphene in P3HT:PCBM for stable and efficient photovoltaic device

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

SINGH J, PRASAD N, PETA KR, BHATNAGAR PK

Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe2 Heterostructures

PHYSICAL REVIEW LETTERS

BURG GW, PRASAD N, KIM K, TANIGUCHI T, WATANABE K, MACDONALD AH, REGISTER LF, TUTUC E

Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits

APPLIED PHYSICS LETTERS

PRASAD N, KUMARI A, BHATNAGAR PK, MATHUR PC, BHATIA CS

Electrical transport properties of polycrystalline CVD graphene on SiO2/Si substrate

DIAMOND RELATED MATERIALS

KUMARI A, PRASAD N, BHATNAGAR PK, MATHUR PC, YADAV AK, TOMY CV, BHATIA CS

Improving the efficiency of a poly(3-hexylthiophene)-CuInS2 photovoltaic device by incorporating graphene nanopowder

JOURNAL OF NANOPHOTONICS

KUMARI A, SINGH I, PRASAD N, DIXIT SK, RAO PK, BHATNAGAR PK, MATHUR PC, BHATIA CS, NAGPAL S

The role of multilayer graphene in the improved electrical and optical characteristics of a P3HT-based photovoltaic device

MATERIALS RESEARCH EXPRESS

SINGH J, PRASAD N, PETA KR, BHATNAGAR PK

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures

NANO LETTERS

BURG GW, PRASAD N, FALLAHAZAD B, VALSARAJ A, KIM K, TANIGUCHI T, WATANABE K, WANG QX, KIM MJ, REGISTER LF, TUTUC E

Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors

NANO LETTERS

KANG S, PRASAD N, MOVVA HCP, RAI A, KIM K, MOU XH, TANIGUCHI T, WATANABE K, REGISTER LF, TUTUC E, BANERJEE SK

Fabrication and Characterization of Graphene Field Effect Transistor: Study of Interfacial Effects for Device Reliability

JOURNAL OF NANO RESEARCH

PRASAD N, KUMARI A, BHATNAGAR PK, MATHUR PC