国家/地区 Korea（2） Switzerland（2）
关键词 BILAYER GRAPHENE（7）
出版物 NANO LETTERS（4） ACS APPLIED MATERIA.（2）
出版时间 2018（7）
机构
作者 TANIGUCHI T（7）

Interface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride

ACS APPLIED MATERIALS INTERFACES

LEE K, LIU ES, WATANABE K, TANIGUCHI T, NAH J

Edge-Limited Valley-Preserved Transport in Quasi-1D Constriction of Bilayer Graphene

NANO LETTERS

LEE H, PARK GH, PARK J, LEE GH, WATANABE K, TANIGUCHI T, LEE HJ

Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

ACS APPLIED MATERIALS INTERFACES

UWANNO T, TANIGUCHI T, WATANABE K, NAGASHIO K

Coupled Quantum Dots in Bilayer Graphene

NANO LETTERS

EICH M, PISONI R, PALLY A, OVERWEG H, KURZMANN A, LEE Y, RICKHAUS P, WATANABE K, TANIGUCHI T, ENSSLIN K, IHN T

Visualization and Control of Single-Electron Charging in Bilayer Graphene Quantum Dots

NANO LETTERS

VELASCO J, LEE J, WONG D, KAHN S, TSAI HZ, COSTELLO J, UMEDA T, TANIGUCHI T, WATANABE K, ZETTL A, WANG F, CROMMIE MF

Gate-Defined Electron-Hole Double Dots in Bilayer Graphene

NANO LETTERS

BANSZERUS L, FROHN B, EPPING A, NEUMAIER D, WATANABE K, TANIGUCHI T, STAMPFER C

Edge channel confinement in a bilayer graphene n-p-n quantum dot

NEW JOURNAL OF PHYSICS

OVERWEG H, RICKHAUS P, EICH M, LEE Y, PISONI R, WATANABE K, TANIGUCHI T, IHN T, ENSSLIN K