国家/地区 Usa（7） China（2）
关键词 GRAPHENE（6） INTERCONNECT（4） RELIABILITY（3）
出版物 NANO LETTERS（3） IEEE ELECTRON DEVIC.（2）
出版时间 2015（4） 2019（2）
机构 STANFORD UNI.（6） TSINGHUA UNI.（2）
作者 WONG HSP（10）

Graphene and two-dimensional materials for silicon technology

NATURE

AKINWANDE D, HUYGHEBAERT C, WANG CH, SERNA MI, GOOSSENS S, LI LJ, WONG HSP, KOPPENS FHL

In-Situ Grown Graphene Enabled Copper Interconnects With Improved Electromigration Reliability

IEEE ELECTRON DEVICE LETTERS

LI L, ZHU ZW, YOON A, WONG HSP

Cost-Effective, Transfer-Free, Flexible Resistive Random Access Memory Using Laser-Scribed Reduced Graphene Oxide Patterning Technology

NANO LETTERS

TIAN H, CHEN HY, REN TL, LI C, XUE QT, MOHAMMAD MA, WU C, YANG Y, WONG HSP

Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode

NANO LETTERS

TIAN H, CHEN HY, GAO B, YU SM, LIANG JL, YANG Y, XIE D, KANG JF, REN TL, ZHANG YG, WONG HSP

Graphene Interconnect Lifetime: A Reliability Analysis

IEEE ELECTRON DEVICE LETTERS

CHEN XY, SEO DH, SEO S, CHUNG H, WONG HSP

Fully Integrated Graphene and Carbon Nanotube Interconnects for Gigahertz High-Speed CMOS Electronics

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHEN XY, AKINWANDE D, LEE KJ, CLOSE GF, YASUDA S, PAUL BC, FUJITA S, KONG J, WONG HSP

In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

ADVANCED MATERIALS

TIAN H, ZHAO HM, WANG XF, XIE QY, CHEN HY, MOHAMMAD MA, LI C, MI WT, BIE Z, YEH CH, YANG Y, WONG HSP, CHIU PW, REN TL

Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier

NANO LETTERS

AHN CY, FONG SW, KIM Y, LEE S, SOOD A, NEUMANN CM, ASHEGH M, GOODSON KE, POP E, WONG HSP

Metal oxide-resistive memory using graphene-edge electrodes

NATURE COMMUNICATIONS

LEE S, SOHN J, JIANG ZZ, CHEN HY, WONG HSP

Vertical and Lateral Copper Transport through Graphene Layers

ACS NANO

LI L, CHEN XY, WANG CH, CAO J, LEE S, TANG A, AHN C, ROY SS, ARNOLD MS, WONG HSP