国家/地区 Korea（2）
关键词 BAND GAP（5）
出版物 ACS APPLIED MATERIALS INTERFACES（5）
出版时间 2016（2） 2018（2）
机构
作者 TANIGUCHI T（2） WATANABE K（2）

Interface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride

ACS APPLIED MATERIALS INTERFACES

LEE K, LIU ES, WATANABE K, TANIGUCHI T, NAH J

Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

ACS APPLIED MATERIALS INTERFACES

UWANNO T, TANIGUCHI T, WATANABE K, NAGASHIO K

Graphene Monoxide Bilayer As a High-Performance on/off Switching Media for Nanoelectronics

ACS APPLIED MATERIALS INTERFACES

WOO J, YUN KH, CHUNG YC

Covalent Carbene Functionalization of Graphene: Toward Chemical Band-Gap Manipulation

ACS APPLIED MATERIALS INTERFACES

SAINSBURY T, PASSARELLI M, NAFTALY M, GNANIAH S, SPENCER SJ, POLLARD AJ

Band Gap Engineering of Boron Nitride by Graphene and Its Application as Positive Electrode Material in Asymmetric Supercapacitor Device

ACS APPLIED MATERIALS INTERFACES

SAHA S, JANA M, KHANRA P, SAMANTA P, KOO H, MURMU NC, KUILA T