国家/地区 Usa（8）
关键词 ELEMENTAL SEMICONDUCTOR（8）
出版物 APPLIED PHYSICS LET.（5） PHYSICAL REVIEW B（2）
出版时间 2010（5） 2009（3）
机构
作者

Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

APPLIED PHYSICS LETTERS

FALLAHAZAD B, KIM S, COLOMBO L, TUTUC E

Graphene destruction by metal-carbide formation: An approach for patterning of metal-supported graphene

APPLIED PHYSICS LETTERS

LAHIRI J, BATZILL M

Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide (0001)

APPLIED PHYSICS LETTERS

HARRISON SE, CAPANO MA, REIFENBERGER R

Single step, complementary doping of graphene

APPLIED PHYSICS LETTERS

BRENNER K, MURALI R

Direct measurement of graphene adhesion on silicon surface by intercalation of nanoparticles

JOURNAL OF APPLIED PHYSICS

ZONG Z, CHEN CL, DOKMECI MR, WAN KT

Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors

APPLIED PHYSICS LETTERS

TSENG F, UNLUER D, HOLCOMB K, STAN MR, GHOSH AW

Electronic structures of zigzag graphene nanoribbons with edge hydrogenation and oxidation

PHYSICAL REVIEW B

LEE G, CHO K

Slow imbalance relaxation and thermoelectric transport in graphene

PHYSICAL REVIEW B

FOSTER MS, ALEINER IL