国家/地区 China（8）
关键词 EPITAXIAL GRAPHENE（8）
出版物 CHINESE PHYSICS B（8）
出版时间 2013（2） 2016（2）
机构 CHINESE ACAD.（2） UNIV ELECT S.（2）
作者 CHEN XL（2） CHEN YF（2） GUO LW（2） HAO X（2）
HE JR（2） HUANG J（2） JIA YP（2） LI YR（2）
LIU JB（2） LU W（2） WANG DC（2） WANG ZG（2）
ZHANG YM（2）

Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substratesl

CHINESE PHYSICS B

WANG DC, ZHANG YM

Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

CHINESE PHYSICS B

HAO X, CHEN YF, WANG ZG, LIU JB, HE JR, LI YR

Effect of 6H-SiC (11(2)over-bar0) substrate on epitaxial graphene revealed by Raman scattering

CHINESE PHYSICS B

LIN JJ, GUO LW, JIA YP, CHEN LL, LU W, HUANG J, CHEN XL

Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers

CHINESE PHYSICS B

HAO X, CHEN YF, LI PJ, WANG ZG, LIU JB, HE JR, FAN R, SUN JR, ZHANG WL, LI YR

Raman analysis of epitaxial graphene grown on 4H-SiC (0001) substrate under low pressure condition

CHINESE PHYSICS B

WANG DC, ZHANG YM, ZHANG YM, LEI TM, GUO H, WANG YH, TANG XY, WANG H

High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

CHINESE PHYSICS B

HE ZZ, YANG KW, YU C, LIU QB, WANG JJ, LI J, LU WL, FENG ZH, CAI SJ

A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide

CHINESE PHYSICS B

HUANG J, GUO LW, LU W, ZHANG YH, SHI Z, JIA YP, LI ZL, YANG JW, CHEN HX, MEI ZX, CHEN XL

Er intercalation and its impact on transport properties of epitaxial graphene

CHINESE PHYSICS B

YANG MM, DUAN Y, KONG WX, ZHANG JZ, WANG JX, CAI Q