国家/地区 Korea（5）
关键词 GALLIUM COMPOUND（8）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2011（3） 2013（2）
机构 KOREA UNIV（3）
作者 KIM J（4） KIM BJ（2） LEE C（2）

Selective growth of (001) GaAs using a patterned graphene mask

JOURNAL OF CRYSTAL GROWTH

HIROTA Y, SHIRAI Y, IHA H, KITO Y, SUZUKI M, KATO H, YAMAMOTO N, MARUYAMA T, NARITSUKA S

Graphene/SiO2/p-GaN Diodes: An Advanced Economical Alternative for Electrically Tunable Light Emitters

ADVANCED FUNCTIONAL MATERIALS

CHANG CW, TAN WC, LU ML, PAN TC, YANG YJ, CHEN YF

Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires hybrid films

AIP ADVANCES

LI Z, KANG JJ, LIU ZQ, DU CX, LEE X, LI X, WANG LC, YI XY, ZHU HW, WANG GH

Large-area suspended graphene on GaN nanopillars

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

LEE C, KIM BJ, REN F, PEARTON SJ, KIM J

Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

APPLIED PHYSICS LETTERS

KIM BJ, LEE C, JUNG Y, BAIK KH, MASTRO MA, HITE JK, EDDY CR, KIM J

Graphene network on indium tin oxide nanodot nodes for transparent and current spreading electrode in InGaN/GaN light emitting diode

APPLIED PHYSICS LETTERS

SEO TH, LEE KJ, OH TS, LEE YS, JEONG H, PARK AH, KIM H, CHOI YR, SUH EK, CUONG TV, PHAM VH, CHUNG JS, KIM EJ

Thermal Modeling of Graphene Layer on the Peak Channel Temperature of AlGaN/GaN High Electron Mobility Transistors

ELECTROCHEMICAL SOLID STATE LETTERS

KO G, KIM J

Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer

ELECTRONICS LETTERS

KIM J, JEONG SM, JEONG J