国家/地区 China（12）
关键词 GRAPHENE（12）
出版物 ADVANCED ELECTRONIC.（2） JOURNAL OF ELECTRON.（2） MATERIALS LETTERS（2）
出版时间 2014（2） 2015（2） 2018（2） 2019（2）
机构 CHINESE ACAD SCI（12）
作者 JIN Z（12）

A uniform stable P-type graphene doping method with a gold etching process

NANOTECHNOLOGY

YAO Y, PENG SA, HUANG XN, ZHANG DY, SHI JY, JIN Z

Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single-Gate Graphene Transistors

ADVANCED ELECTRONIC MATERIALS

YAO Y, HUANG XN, PENG OG, ZHANG DY, SHI JY, YU GH, LIU Q, JIN Z

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistors with Graphene

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

ZHANG GB, ZHAO M, YAN CL, SUN B, WU ZG, CHANG HD, JIN Z, SUN J, LIU HG

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?

ADVANCED ELECTRONIC MATERIALS

PENG SA, JIN Z, ZHANG DY, SHI JY, NIU JB, HUANG XN, YAO Y, ZHANG YH, YU GH

Effect of Cu substrate roughness on growth of graphene domains at atmospheric pressure

MATERIALS LETTERS

WANG B, ZHANG HR, ZHANG YH, CHEN ZY, JIN Z, LIU XY, HU LZ, YU GH

The Anistropy of Field Effect Mobility of CVD Graphene Grown on Copper Foil

SMALL

ZHANG DY, JIN Z, SHI JY, MA P, PENG SG, LIU XY, YE TC

High quality graphene grown on single-crystal Mo(110) thin films

MATERIALS LETTERS

WANG B, ZHANG YH, CHEN ZY, WU YW, JIN Z, LIU XY, HU LZ, YU GH

Top-gated graphene field-effect transistors on SiC substrates

CHINESE SCIENCE BULLETIN

MA P, JIN Z, GUO JN, PAN HL, LIU XY, YE TC, JIA YP, GUO LW, CHEN XL

Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor

ACS APPLIED MATERIALS INTERFACES

PENG SG, JIN Z, ZHANG DY, SHI JY, MAO DC, WANG SQ, YU GH

Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

CHINESE PHYSICS B

MAO DC, JIN Z, WANG SQ, ZHANG DY, SHI JY, PENG SA, WANG XY