国家/地区 Japan（8） Usa（5） Netherlands（2）
关键词 IMPURITY SCATTERING（19）
出版物 JOURNAL OF THE PHYS.（6） PHYSICAL REVIEW B（6）
出版时间 2009（7） 2010（3） 2011（3） 2008（2） 2012（2）
机构 TOKYO INST T.（8） ARIZONA STAT.（2）
作者 ANDO T（8） KOSHINO M（3） ARIMURA Y（2） CHEN F（2）
FERRY DK（2） NORO M（2） SHISHIR RS（2） TAO NJ（2）
XIA J（2）

Carrier Transport in Graphene Field-Effect Transistors on Gated Polar Nitride Substrates

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

BALASUBRAMANIAN K, CHANDRASEKAR H, RAGHAVAN S

Bilayer graphene with long-range scatterers: Diamagnetism and weak-field Hall effect

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

ANDO T

Semiclassical Monte Carlo Analysis of Graphene FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

DAVID JK, REGISTER LF, BANERJEE SK

Diamagnetism of Graphene with Gap in Nonuniform Magnetic Field

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

ARIMURA Y, ANDO T

Diamagnetic Response of Disordered Graphene to Nonuniform Magnetic Field

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

ARIMURA Y, KOSHINO M, ANDO T

Diamagnetism of Graphene with Long-Range Scatterers

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

NORO M, KOSHINO M, ANDO T

Bilayer Graphene with Long-Range Scatterers Studied in a Self-Consistent Born Approximation

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

ANDO T

Theory of Transport in Graphene with Long-Range Scatterers

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

NORO M, KOSHINO M, ANDO T

Theory of Electron Scattering by Lattice Defects in Monolayer Graphene

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

TOYODA A, ANDO T

High Mobility, Printable, and Solution-Processed Graphene Electronics

NANO LETTERS

WANG S, ANG PK, WANG ZQ, TANG ALL, THONG JTL, LOH KP