国家/地区 India（10）
关键词 MOBILITY（10）
出版物 IEEE TRANSACTIONS O.（3）
出版时间 2013（2） 2018（2） 2020（2）
机构 INDIAN INST .（3）
作者

Carrier Transport in Graphene Field-Effect Transistors on Gated Polar Nitride Substrates

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

BALASUBRAMANIAN K, CHANDRASEKAR H, RAGHAVAN S

Mobility improvement in CVD graphene by using local metal side-gate

SEMICONDUCTOR SCIENCE TECHNOLOGY

ACHARYA S, BABU AV, KHADAR RA, KOTTANTHARAYIL A

Explicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regime

IEEE TRANSACTIONS ON ELECTRON DEVICES

UPADHYAY AK, KUSHWAHA AK, RASTOGI P, CHAUHAN YS, VISHVAKARMA SK

A comparative study of graphene and graphite-based field effect transistor on flexible substrate

PRAMANAJOURNAL OF PHYSICS

BHATT K, RANI C, VAID M, KAPOOR A, KUMAR P, KUMAR S, SHRIWASTAWA S, SHARMA S, SINGH R, TRIPATHI CC

Field effect transport properties of chemically treated graphene quantum dots

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY

KALITA H, HARIKRISHNAN V, ASLAM M

Modeling of Temperature and Field-Dependent Electron Mobility in a Single-Layer Graphene Sheet

IEEE TRANSACTIONS ON ELECTRON DEVICES

VERMA R, BHATTACHARYA S, MAHAPATRA S

Investigation of Transfer Characteristics of High Performance Graphene Flakes

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

VENUGOPAL G, KRISHNAMOORTHY K, KIM SJ

Modification of Electronic Properties of Graphene with Porphyrin Self-Assembled Monolayers and Photoinduced Interactions

NANOSCIENCE NANOTECHNOLOGY LETTERS

KHADERBAD MA, TJOA V, MATHEWS N, MADHU S, RAVIKANTH M, RAO VR

Low-Voltage and High-Performance Multilayer MoS2 Field-Effect Transistors with Graphene Electrodes

ACS APPLIED MATERIALS INTERFACES

SINGH AK, HWANG C, EOM J

Flexibility of Key Electronic and Optical Properties of Reduced Graphene Oxide Through Its Controlled Synthesis

IEEE TRANSACTIONS ON ELECTRON DEVICES

NARZARY R, PHUKAN P, DAS S, SAHU PP