国家/地区 India（3） Usa（2）
关键词 MOBILITY（8）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（8）
出版时间 2011（2） 2018（2）
机构
作者

Explicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regime

IEEE TRANSACTIONS ON ELECTRON DEVICES

UPADHYAY AK, KUSHWAHA AK, RASTOGI P, CHAUHAN YS, VISHVAKARMA SK

All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts

IEEE TRANSACTIONS ON ELECTRON DEVICES

PANDEY H, SHAYGAN M, SAWALLICH S, KATARIA S, ZHENXING W, NOCULAK A, OTTO M, NAGEL M, NEGRA R, NEUMAIER D, LEMME MC

Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

CARRION EA, SEROV AY, ISLAM S, BEHNAM A, MALIK A, XIONG F, BIANCHI M, SORDAN R, POP E

Modeling of Temperature and Field-Dependent Electron Mobility in a Single-Layer Graphene Sheet

IEEE TRANSACTIONS ON ELECTRON DEVICES

VERMA R, BHATTACHARYA S, MAHAPATRA S

An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons

IEEE TRANSACTIONS ON ELECTRON DEVICES

GOHARRIZI AY, POURFATH M, FATHIPOUR M, KOSINA H, SELBERHERR S

Radio-Frequency Transistors Using Chemical-Vapor-Deposited Monolayer Graphene: Performance, Doping, and Transport Effects

IEEE TRANSACTIONS ON ELECTRON DEVICES

NAYFEH OM

Graphene Field-Effect Transistor Model With Improved Carrier Mobility Analysis

IEEE TRANSACTIONS ON ELECTRON DEVICES

TIAN J, KATSOUNAROS A, SMITH D, HAO Y

Flexibility of Key Electronic and Optical Properties of Reduced Graphene Oxide Through Its Controlled Synthesis

IEEE TRANSACTIONS ON ELECTRON DEVICES

NARZARY R, PHUKAN P, DAS S, SAHU PP