国家/地区 China（4）
关键词 NEGATIVE DIFFERENTIAL RESISTANCE（9）
出版物 PHYSICS LETTERS A（2）
出版时间 2018（9）
机构
作者

Tuning the morphology of chevron-type graphene nanoribbons by choice of annealing temperature

NANO RESEARCH

CAO Y, QI J, ZHANG YF, HUANG L, ZHENG Q, LIN X, CHENG ZH, ZHANG YY, FENG XL, DU SX, PANTELIDES ST, GAO HJ

Effects of different tailoring graphene electrodes on the rectification and negative differential resistance of molecular devices

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

ZHANG TT, XIA CJ, ZHANG BQ, LU XF, LIU Y, CUI Y, TANG XJ

Modulation of Negative Differential Resistance in Graphene Field-Effect Transistors by Tuning the Contact Resistances

JOURNAL OF ELECTRONIC MATERIALS

TRAN PX

Comparing Structural and Electrical Properties of Fluorinated Graphene, Graphene Oxide, and Graphene Films Functionalized with N-Methylpyrrolidone

JOURNAL OF STRUCTURAL CHEMISTRY

KURKINA II, VASILEVA FD

Impact of interface types on spin transport in heterostructures of graphene/hexagonal boron-nitride nanoribbons

ORGANIC ELECTRONICS

WANG M, LI XT, LI Y, ZUO X, LI DM, CUI B, LIU DS

Large negative differential resistance in graphene nanoribbon superlattices

PHYSICS LETTERS A

TSENG P, CHEN CH, HSU SA, HSUEH WJ

Strain-induced tunable negative differential resistance in triangle graphene spirals

NANOTECHNOLOGY

TAN J, ZHANG XM, LIU WG, HE XJ, ZHAO MW

Negative differential resistance and rectification effects in zigzag graphene nanoribbon heterojunctions: Induced by edge oxidation and symmetry concept

PHYSICS LETTERS A

NAZIRFAKHR M, SHAHHOSEINI A

Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field-Effect Transistors

IEEE ELECTRON DEVICE LETTERS

SMITH S, LLINAS JP, BOKOR J, SALAHUDDIN S