国家/地区 Taiwan（2）
关键词 SEMICONDUCTOR DOPING（8）
出版物 APPLIED PHYSICS LET.（6）
出版时间 2010（5）
机构
作者

Complementary metal-SU8-graphene method for making integrated graphene nanocircuits

MICRO NANO LETTERS

ALMUMEN H, LI W

Electronic structures of an epitaxial graphene monolayer on SiC(0001) after metal intercalation (metal = Al, Ag, Au, Pt, and Pd): A first-principles study

APPLIED PHYSICS LETTERS

HSU CH, LIN WH, OZOLINS V, CHUANG FC

Charge transfer between epitaxial graphene and silicon carbide

APPLIED PHYSICS LETTERS

KOPYLOV S, TZALENCHUK A, KUBATKIN S, FAL KO VI

The electronic properties of graphene nanoribbons with boron/nitrogen codoping

APPLIED PHYSICS LETTERS

WANG ZY, HU HF, ZENG H

Controllable graphene N-doping with ammonia plasma

APPLIED PHYSICS LETTERS

LIN YC, LIN CY, CHIU PW

Bismuth doping of graphene

APPLIED PHYSICS LETTERS

AKTURK OU, TOMAK M

Single step, complementary doping of graphene

APPLIED PHYSICS LETTERS

BRENNER K, MURALI R

Impact of source/drain doping concentration on graphene nanoribbon field effect transistor performance

IET CIRCUITS DEVICES SYSTEMS

KAUR J, KUMARI A