国家/地区 Singapore（3） Usa（3） Korea（2）
关键词 SILICON CARBIDE（9）
出版物 ACS NANO（9）
出版时间 2010（2） 2014（2）
机构 NATL UNIV SI.（3）
作者 HUANG H（4） WEE ATS（4） CHEN W（3） CHEN S（2）

Millimeter-Scale Growth of Single-Oriented Graphene on a Palladium Silicide Amorphous Film

ACS NANO

KIRN HW, SONG I, KIM TH, AHN SJ, SHIN HC, AN BS, JANG Y, JEON S, KIM EH, KHADKA IB, GU T, WOO SH, WHANG D, KIM Y, YANG CW, AHN JR

Laser-Induced Solid-Phase Doped Graphene

ACS NANO

CHOI I, JEONG HY, JUNG DY, BYUN M, CHOI CG, HONG BH, CHOI SY, LEE KJ

Incorporating Isolated Molybdenum (Mo) Atoms into Bilayer Epitaxial Graphene on 4H-SiC(0001)

ACS NANO

WAN W, LI H, HUANG H, WONG SH, LV L, GAO YL, WEE ATS

Quasi-Free-Standing Epitaxial Graphene on SiC (0001) by Fluorine Intercalation from a Molecular Source

ACS NANO

WONG SL, HUANG H, WANG YZ, CAO L, QI DC, SANTOSO I, CHEN W, WEE ATS

Layer-by-Layer Transfer of Multiple, Large Area Sheets of Graphene Grown in Multilayer Stacks on a Single SiC Wafer

ACS NANO

UNARUNOTAI S, KOEPKE JC, TSAI CL, DU F, CHIALVO CE, MURATA Y, HAASCH R, PETROV I, MASON N, SHIM M, LYDING J, ROGERS JA

Nucleation of Epitaxial Graphene on SiC(0001)

ACS NANO

ROBINSON J, WENG XJ, TRUMBULL K, CAVALERO R, WETHERINGTON M, FRANTZ E, LABELLA M, HUGHES Z, FANTON M, SNYDER D

Structural and Electronic Properties of PTCDA Thin Films on Epitaxial Graphene

ACS NANO

HUANG H, CHEN S, GAO XY, CHEN W, WEE ATS

Bottom-up Growth of Epitaxial Graphene on 6H-SiC(0001)

ACS NANO

HUANG H, CHEN W, CHEN S, WEE ATS

Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene

ACS NANO

LIU XL, BALLA I, BERGERON H, CAMPBELL GP, BEDZYK MJ, HERSAM MC