国家/地区 Usa（5） Germany（3） Italy（2） Singapore（2）
关键词 SILICON COMPOUND（19）
出版物 APPLIED PHYSICS LETTERS（19）
出版时间 2010（12） 2009（3） 2008（2）
机构
作者

A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel

APPLIED PHYSICS LETTERS

KRACH F, HERTEL S, WALDMANN D, JOBST J, KRIEGER M, RESHANOV S, SCHONER A, WEBER HB

Doping of graphene adsorbed on the a-SiO2 surface

APPLIED PHYSICS LETTERS

MIWA RH, SCHMIDT TM, SCOPEL WL, FAZZIO A

Charge transfer between epitaxial graphene and silicon carbide

APPLIED PHYSICS LETTERS

KOPYLOV S, TZALENCHUK A, KUBATKIN S, FAL KO VI

Epitaxial graphene on cubic SiC(111)/Si(111) substrate

APPLIED PHYSICS LETTERS

OUERGHI A, KAHOULI A, LUCOT D, PORTAIL M, TRAVERS L, GIERAK J, PENUELAS J, JEGOU P, SHUKLA A, CHASSAGNE T, ZIELINSKI M

Resonant photoluminescent charging of epitaxial graphene

APPLIED PHYSICS LETTERS

LOUNIS SD, SIEGEL DA, BROESLER R, HWANG CG, HALLER EE, LANZARA A

Identifying and characterizing epitaxial graphene domains on partially graphitized SiC(0001) surfaces using scanning probe microscopy

APPLIED PHYSICS LETTERS

KELLAR JA, ALABOSON JMP, WANG QH, HERSAM MC

Wide memory window in graphene oxide charge storage nodes

APPLIED PHYSICS LETTERS

WANG S, PU J, CHAN DSH, CHO BJ, LOH KP

Model of tunneling transistors based on graphene on SiC

APPLIED PHYSICS LETTERS

MICHETTI P, CHELI M, IANNACCONE G

Measurements of the sheet resistance and conductivity of thin epitaxial graphene and SiC films

APPLIED PHYSICS LETTERS

KRUPKA J, STRUPINSKI W

Scalable growth of free-standing graphene wafers with copper(Cu) catalyst on SiO2/Si substrate: Thermal conductivity of the wafers

APPLIED PHYSICS LETTERS

LEE YH, LEE JH