国家/地区 Usa（9）
关键词 TRANSISTOR（13）
出版物 NANO LETTERS（5） ACS NANO（2）
出版时间 2010（13）
机构 UNIV CALIF L.（3） RICE UNIV（2）
作者 DUAN XF（2） LIAO L（2） LIN YM（2）

Scalable Synthesis of Graphene on Patterned Ni and Transfer

IEEE TRANSACTIONS ON ELECTRON DEVICES

WANG YJ, MIAO CQ, HUANG BC, ZHU J, LIU W, PARK Y, XIE YH, WOO JCS

Graphene-dielectric integration for graphene transistors

MATERIALS SCIENCE ENGINEERING RREPORTS

LIAO L, DUAN XF

Graphene Nanoribbon Thin Films Using Layer-by-Layer Assembly

NANO LETTERS

ZHU Y, TOUR JM

Controllable p-n Junction Formation in Mono layer Graphene Using Electrostatic Substrate Engineering

NANO LETTERS

CHIU HY, PEREBEINOS V, LIN YM, AVOURIS P

Triple-Mode Single-Transistor Graphene Amplifier and Its Applications

ACS NANO

YANG XB, LIU GX, BALANDIN AA, MOHANRAM K

Highly Efficient Restoration of Graphitic Structure in Graphene Oxide Using Alcohol Vapors

ACS NANO

SU CY, XU YP, ZHANG WJ, ZHAO JW, LIU AP, TANG XH, TSAI CH, HUANG YZ, LI LJ

Peak Channel Temperature of Graphene-Based Transistors

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

KO G, JUNG Y, KIM J

Charge Noise in Graphene Transistors

NANO LETTERS

HELLER I, CHATOOR S, MANNIK J, ZEVENBERGEN MAG, OOSTINGA JB, MORPURGO AF, DEKKER C, LEMAY SG

Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-k Dielectrics

NANO LETTERS

LIAO L, BAI JW, CHENG R, LIN YC, JIANG S, HUANG Y, DUAN XF

Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

IEEE ELECTRON DEVICE LETTERS

MOON JS, CURTIS D, BUI S, HU M, GASKILL DK, TEDESCO JL, ASBECK P, JERNIGAN GG, VANMIL BL, MYERSWARD RL, EDDY CR, CAMPBELL PM, WENG X