国家/地区 China（14）
关键词 GQDS CONTENT（3） GRAPHENE QUANTUM DO.（3） PHOTOELECTRIC PERFO.（3）
PHOTOELECTRIC PROPE.（3） DOPING RATIO（2） GRAPHENE（2）
NGQD（2）
出版物 JOURNAL OF MATERIAL.（2） MATERIALS RESEARCH .（2） MATERIALS SCIENCE I.（2）
出版时间 2019（5） 2020（3） 2021（3） 2018（2）
机构 WUHAN UNIV T.（10）
作者 JIANG ZC（14）

Synthesis of Zn0.1Cd0.9S heterostructure with N-doped graphene quantum dots and graphene for enhancing photoelectric performance in UV-visible light

CERAMICS INTERNATIONAL

JIANG ZC, LEI Y, LIN YY, HU JX, OUYANG Z

S, N co-doped graphene quantum dots decorated CdSe for enhanced photoelectric properties

NANOTECHNOLOGY

OUYANG Z, LEI Y, LUO LQ, JIANG ZC, HU JX, LIN YY

Nitrogen-doped graphene quantum dots decorated ZnxCd1-xS semiconductor with tunable photoelectric properties

JOURNAL OF ALLOYS COMPOUNDS

JIANG ZC, LEI Y, ZHANG Z, HU JX, LIN YY, OUYANG Z

Synthesis of graphene quantum dots doped CdS composites for photoelectric properties

MATERIALS RESEARCH EXPRESS

LEI Y, LIN YY, WANG JY, ZHANG Z, JIANG ZC, OUYANG Z, HU JX

Photoelectric properties of SnO2 decorated by graphene quantum dots

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

LEI Y, HU JX, ZHANG Z, OUYANG Z, JIANG ZC, LIN YY

Preparation and Specific Capacitance Properties of Sulfur, Nitrogen Co-Doped Graphene Quantum Dots

NANOSCALE RESEARCH LETTERS

OUYANG Z, LEI Y, CHEN YP, ZHANG Z, JIANG ZC, HU JX, LIN YY

Graphene Quantum Dots-Modified Ternary ZnCdS Semiconductor for Enhancing Photoelectric Properties

JOURNAL OF NANOMATERIALS

JIANG ZC, LEI Y, ZHANG MZ, ZHANG Z, OUYANG Z

Enhanced photoelectric performance of CdSe by graphene quantum dot modification

MATERIALS RESEARCH EXPRESS

LEI Y, OUYANG Z, ZHANG Z, JIANG ZC

Graphene Quantum Dots Decorated Al-Doped ZnS for Improved Photoelectric Performance

MATERIALS

ZHANG Z, LEI Y, ZHAO LY, JIANG ZC, OUYANG Z

Effects of Zn/S ratios on the photoelectric properties of ZnS/microcrystalline graphene composites

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

LEI Y, JIANG ZC, ZHANG Z