国家/地区 China（9）
关键词 EPITAXIAL GRAPHENE（2） RAMAN（2）
出版物 CHINESE PHYSICS B（2） JOURNAL OF MATERIAL.（2）
出版时间 2016（3） 2013（2） 2019（2）
机构 XIDIAN UNIV（9）
作者 GUO H（9）

An ultraviolet photoelectron spectroscopy study on bandgap broadening of epitaxial graphene on SiC with surface doping

CARBON

HU YF, LIU JL, DOU WT, MAO KL, GUO LX, CHONG LY, HU JC, YUAN H, HE YJ, GUO H, ZHANG YM

Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC

NANOMATERIALS

CHONG LY, GUO H, ZHANG YM, HU YF, ZHANG YM

Fabrication of graphene-like carbon films on 6H-SiC substrates via chlorination-annealing at low temperature

AIP ADVANCES

HU YF, GUO LX, DOU WT, CHONG LY, GUO H, ZHANG YM

A quantum explanation of the magnetic properties of Mn-doped graphene

CHINESE PHYSICS B

LEI TM, LIU JJ, ZHANG YM, GUO H, ZHANG ZY

Fabrication of Thin Graphene Layers on a Stacked 6H-SiC Surface in a Graphite Enclosure

CHINESE PHYSICS LETTERS

DENG PF, LEI TM, LU JJ, LIU FY, ZHANG YM, GUO H, ZHANG YM, WANG YH, TANG XY

Raman analysis of epitaxial graphene grown on 4H-SiC (0001) substrate under low pressure condition

CHINESE PHYSICS B

WANG DC, ZHANG YM, ZHANG YM, LEI TM, GUO H, WANG YH, TANG XY, WANG H

Effects of substrate on the domains and electrical properties of epitaxial graphene formed on on-axis C-face 4H-SiC

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

HU YF, ZHANG YM, GUO H, CHONG LY, ZHANG CX, ZHANG YM

Growth of thickness-controlled epitaxial graphene on on-axis 6H-SiC (C-face) substrate in graphite enclosure

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

HU YF, ZHANG YM, GUO H, CHONG LY, ZHANG CX, ZHANG YM

Preparation of few-layer graphene on on-axis 4H-SiC (000(1)over-bar) substrates using a modified SiC-stacked method

MATERIALS LETTERS

HU YF, ZHANG YM, GUO H, CHONG LY, ZHANG YM