国家/地区 Italy（9）
关键词 TRANSISTOR（9）
出版物 IEEE ELECTRON DEVIC.（2） IEEE TRANSACTIONS O.（2）
出版时间 2015（3）
机构 UNIV BOLOGNA（4）
作者 BACCARANI G（4） DI LECCE V（4） GNANI E（4） GNUDI A（4）
REGGIANI S（4） GRASSI R（2）

Investigation on MetalOxide Graphene Field-Effect Transistors With Clamped Geometries

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

GIAMBRA MA, BENZ C, WU F, THURMER M, BALACHANDRAN G, BENFANTE A, PERNICE R, PANDEY H, BOOPATHI M, JANG MH, AHN JH, STIVALA S, CALANDRA E, ARNONE C, CUSUMANO P, BUSACCA A, PERNICE WHP, DANNEAU R

Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons

MATERIALS

MARCONCINI P, CRESTI A, ROCHE S

Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

DI LECCE V, GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Logic gates with a single graphene transistor

APPLIED PHYSICS LETTERS

SORDAN R, TRAVERSI F, RUSSO V

Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection

IEEE ELECTRON DEVICE LETTERS

DI LECCE V, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics

SOLIDSTATE ELECTRONICS

DI LECCE V, GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics

NANOTECHNOLOGY

DI BARTOLOMEO A, GIUBILEO F, ROMEO F, SABATINO P, CARAPELLA G, IEMMO L, SCHROEDER T, LUPINA G

Simulations of Graphene Base Transistors With Improved Graphene Interface Model

IEEE ELECTRON DEVICE LETTERS

DI LECCE V, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Characterization and Modeling of Reduced-Graphene Oxide Ambipolar Thin-Film Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

LAGO N, BUONOMO M, HENSEL RC, SEDONA F, SAMBI M, CASALINI S, CESTER A