国家/地区 Japan（9）
关键词 HELIUM ION BEAM MIL.（2）
出版物 CARBON（2） NANOSCALE（2）
出版时间 2019（3） 2017（2） 2018（2）
机构 JAPAN ADV INST SCI TECHNOL（9）
作者 SCHMIDT ME（9）

Dielectric-Screening Reduction-Induced Large Transport Gap in Suspended Sub-10 nm Graphene Nanoribbon Functional Devices

SMALL

SCHMIDT ME, MURUGANATHAN M, KANZAKI T, IWASAKI T, HAMMAM AMM, SUZUKI S, OGAWA S, MIZUTA H

Stacking of nanocrystalline graphene for nano-electro-mechanical (NEM) actuator applications

MICROSYSTEM TECHNOLOGIESMICROAND NANOSYSTEMSINFORMATION STORAGE PROCESSING SYSTEMS

JOTHIRAMALINGAM K, SCHMIDT ME, MANOHARAN M, HAMMAM AMM, MIZUTA H

Sub-thermal switching of ultra-narrow graphene nanoribbon tunnel field effect transistors

SUPERLATTICES MICROSTRUCTURES

SUZUKI S, SCHMIDT ME, MURUGANATHAN M, HAMMAM AMM, IWASAKI T, MIZUTA H

Structurally Controlled Large-Area 10 nm Pitch Graphene Nanomesh by Focused Helium Ion Beam Milling

ACS APPLIED MATERIALS INTERFACES

SCHMIDT ME, IWASAKI T, MURUGANATHAN M, HAQUE M, VAN NGOC H, OGAWA S, MIZUTA H

Sub-10 nm graphene nano-ribbon tunnel field-effect transistor

CARBON

HAMAM AMM, SCHMIDT ME, MURUGANATHAN M, SUZUKI S, MIZUTA H

Metal-free plasma-enhanced chemical vapor deposition of large area nanocrystalline graphene

MATERIALS RESEARCH EXPRESS

SCHMIDT ME, XU CG, COOKE M, MIZUTA H, CHONG HMH

Sharp switching behaviour in graphene nanoribbon p-n junction

CARBON

HAMMAM AMM, SCHMIDT ME, MURUGANATHAN M, MIZUTA H

Partial hydrogenation induced interaction in a graphene-SiO2 interface: irreversible modulation of device characteristics

NANOSCALE

IWASAKI T, MURUGANATHAN M, SCHMIDT ME, MIZUTA H

Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substrates

NANOSCALE

SUN J, SCHMIDT ME, MURUGANATHAN M, CHONG HMH, MIZUTA H