国家/地区 Korea（6）
关键词 WIDE BAND GAP SEMICONDUCTOR（6）
出版物 APPLIED PHYSICS LET.（4）
出版时间 2011（3） 2009（2）
机构 KOREA UNIV（3）
作者 KIM J（3） KIM BJ（2） KIM H（2） LEE C（2）

Horizontally aligned ZnO nanowire transistors using patterned graphene thin films

APPLIED PHYSICS LETTERS

KIM H, PARK JH, SUH M, AHN JR, JU S

Large-area suspended graphene on GaN nanopillars

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

LEE C, KIM BJ, REN F, PEARTON SJ, KIM J

Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

APPLIED PHYSICS LETTERS

KIM BJ, LEE C, JUNG Y, BAIK KH, MASTRO MA, HITE JK, EDDY CR, KIM J

Graphene network on indium tin oxide nanodot nodes for transparent and current spreading electrode in InGaN/GaN light emitting diode

APPLIED PHYSICS LETTERS

SEO TH, LEE KJ, OH TS, LEE YS, JEONG H, PARK AH, KIM H, CHOI YR, SUH EK, CUONG TV, PHAM VH, CHUNG JS, KIM EJ

Vertically aligned ZnO nanostructures grown on graphene layers

APPLIED PHYSICS LETTERS

KIM YJ, LEE JH, YI GC

Thermal Modeling of Graphene Layer on the Peak Channel Temperature of AlGaN/GaN High Electron Mobility Transistors

ELECTROCHEMICAL SOLID STATE LETTERS

KO G, KIM J