国家/地区 Korea（17）
关键词 GRAPHENE（2）
出版物 APPLIED PHYSICS LET.（4） CARBON（4） NANOTECHNOLOGY（3）
SCIENTIFIC REPORTS（2）
出版时间 2013（7） 2015（3） 2011（2） 2012（2）
机构 GWANGJU INST SCI TECHNOL（17）
作者 CHO C（17）

Facile process to clean PMMA residue on graphene using KrF laser annealing

AIP ADVANCES

HWANG HJ, LEE Y, CHO C, LEE BH

Novel multi-bit memory device using metal/PVDF-TrFE/graphene stack

MICROELECTRONIC ENGINEERING

HWANG HJ, YANG JH, KANG SC, CHO C, KANG CG, LEE YG, LEE BH

Correlation between the hysteresis and the initial defect density of graphene

APPLIED PHYSICS LETTERS

CHO C, LEE YG, JUNG U, KANG CG, LIM S, HWANG HJ, CHOI H, LEE BH

Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using the short pulse I-V method

CARBON

LEE YG, KANG CG, CHO C, KIM Y, HWANG HJ, LEE BH

Ferroelectric polymer-gated graphene memory with high speed conductivity modulation

NANOTECHNOLOGY

HWANG HJ, YANG JH, LEE YG, CHO C, KANG CG, KANG SC, PARK W, LEE BH

Effects of multi-layer graphene capping on Cu interconnects

NANOTECHNOLOGY

KANG CG, LIM SK, LEE S, LEE SK, CHO C, LEE YG, HWANG HJ, KIM Y, CHOI HJ, CHOE SH, HAM MH, LEE BH

Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors

APPLIED PHYSICS LETTERS

LEE YG, KIM YJ, KANG CG, CHO C, LEE S, HWANG HJ, JUNG U, LEE BH

Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors

CARBON

KANG CG, LEE YG, LEE SK, PARK E, CHO C, LIM SK, HWANG HJ, LEE BH

Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices

CARBON

LEE SK, KANG CG, LEE YG, CHO C, PARK E, CHUNG HJ, SEO S, LEE HD, LEE BH

Flexible organic solar cells composed of P3HT:PCBM using chemically doped graphene electrodes

NANOTECHNOLOGY

LEE S, YEO JS, JI Y, CHO C, KIM DY, NA SI, LEE BH, LEE T