国家/地区 Korea（8）
关键词 BILAYER GRAPHENE（3）
出版物 NANO LETTERS（3）
出版时间 2018（2） 2019（2）
机构 POHANG UNIV SCI TECHNOL（8）
作者 TANIGUCHI T（8）

Robust subgap edge conduction in bilayer graphene with disordered edge termination

PHYSICAL REVIEW B

LEE H, WATANABE K, TANIGUCHI T, LEE GH, LEE HJ

Engineering Crossed Andreev Reflection in Double-Bilayer Graphene

NANO LETTERS

PARK GH, WATANABE K, TANIGUCHI T, LEE GH, LEE HJ

Planar graphene Josephson coupling via van der Waals superconducting contacts

CURRENT APPLIED PHYSICS

LEE J, KIM M, WATANABE K, TANIGUCHI T, LEE GH, LEE HJ

Edge-Limited Valley-Preserved Transport in Quasi-1D Constriction of Bilayer Graphene

NANO LETTERS

LEE H, PARK GH, PARK J, LEE GH, WATANABE K, TANIGUCHI T, LEE HJ

Short Ballistic Josephson Coupling in Planar Graphene Junctions with Inhomogeneous Carrier Doping

PHYSICAL REVIEW LETTERS

PARK J, LEE JH, LEE GH, TAKANE Y, IMURA KI, TANIGUCHI T, WATANABE K, LEE HJ

Realisation of topological zero-energy mode in bilayer graphene in zero magnetic field

SCIENTIFIC REPORTS

LEE J, WATANABE K, TANIGUCHI T, LEE HJ

Valley-symmetry-preserved transport in ballistic graphene with gate-defined carrier guiding

NATURE PHYSICS

KIM M, CHOI JH, LEE SH, WATANABE K, TANIGUCHI T, JHI SH, LEE HJ

Fractional Quantum Hall States in Bilayer Graphene Probed by Transconductance Fluctuations

NANO LETTERS

KIM Y, LEE DS, JUNG S, SKAKALOVA V, TANIGUCHI T, WATANABE K, KIM JS, SMET JH