国家/地区 Korea（10）
关键词 GRAPHENE（5）
出版物 IEEE ELECTRON DEVICE LETTERS（10）
出版时间 2016（2） 2018（2）
机构 GWANGJU INST.（3） KWANGWOON UN.（3）
作者 LEE BH（3） HA TJ（2） KIM S（2） KIM YJ（2）
LEE YG（2） SEO S（2）

Low-Voltage Operating Complementary-Type Graphene Inverters With an Interacting Layer of Solution-Processed Fluorocarbon Copolymers

IEEE ELECTRON DEVICE LETTERS

KANG BC, HA TJ

Geometrically Enhanced Graphene Tunneling Diode With Lateral Nano-Scale

IEEE ELECTRON DEVICE LETTERS

YANG JH, SHIN JH, KIM S, PYO G, JANG AR, YANG HW, KANG DJ, JANG JE

Ternary Full Adder Using Multi-Threshold Voltage Graphene Barristors

IEEE ELECTRON DEVICE LETTERS

HEO S, KIM S, KIM K, LEE H, KIM SY, KIM YJ, KIM SM, LEE HI, LEE S, KIM KR, KANG S, LEE BH

Effect of Microwave Annealing on Transparent In-Ga-ZnO Thin-Film Transistors With Graphene Source and Drain Electrodes

IEEE ELECTRON DEVICE LETTERS

HONG EK, CHO WJ

Effect of Temperature and Humidity on NO2 and NH3 Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD

IEEE ELECTRON DEVICE LETTERS

KIM CH, YOO SW, NAM DW, SEO S, LEE JH

Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment

IEEE ELECTRON DEVICE LETTERS

KANG CG, LEE SK, LEE YG, HWANG HJ, CHO C, LIM SK, HEO J, CHUNG HJ, YANG H, SEO S, LEE BH

Flexible Resistive Switching Memory Device Based on Graphene Oxide

IEEE ELECTRON DEVICE LETTERS

HONG SK, KIM JE, KIM SO, CHOI SY, CHO BJ

Charge Transport Properties of Improved Reduced-Graphene-Oxide-Based Field-Effect Transistors

IEEE ELECTRON DEVICE LETTERS

PARK BS, HA TJ

Theoretical and Experimental Investigation of Graphene/High-kappa/p-Si Junctions

IEEE ELECTRON DEVICE LETTERS

SHIM J, YOO G, KANG DH, JUNG WS, BYUN YC, KIM H, KANG WT, YU WJ, YU HY, PARK Y, PARK JH

Extraction of the Interface State Density of Top-Gate Graphene Field-Effect Transistors

IEEE ELECTRON DEVICE LETTERS

JUNG U, KIM YJ, KIM Y, LEE YG, LEE BH