国家/地区 Usa（13）
关键词
出版物 PHYSICAL REVIEW B（4） JOURNAL OF VACUUM S.（2）
出版时间 2012（4） 2010（3） 2013（3） 2009（2）
机构 CARNEGIE MEL.（9）
作者 SRIVASTAVA N（13）

Formation of a Buffer Layer for Graphene on C-Face SiC{0001}

JOURNAL OF ELECTRONIC MATERIALS

HE GW, SRIVASTAVA N, FEENSTRA RM

Graphene Nucleation Density on Copper: Fundamental Role of Background Pressure

JOURNAL OF PHYSICAL CHEMISTRY C

VLASSIOUK I, SMIRNOV S, REGMI M, SURWADE SP, SRIVASTAVA N, FEENSTRA R, ERES G, PARISH C, LAVRIK N, DATSKOS P, DAI S, FULVIO P

Low-energy electron reflectivity of graphene on copper and other substrates

PHYSICAL REVIEW B

SRIVASTAVA N, GAO Q, WIDOM M, FEENSTRA RM, NIE S, MCCARTY KF, VLASSIOUK IV

Low-energy electron reflectivity from graphene

PHYSICAL REVIEW B

FEENSTRA RM, SRIVASTAVA N, GAO Q, WIDOM M, DIACONESCU B, OHTA T, KELLOGG GL, ROBINSON JT, VLASSIOUK IV

Formation of graphene on SiC(000(1)over-bar) surfaces in disilane and neon environments

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HE GW, SRIVASTAVA N, FEENSTRA RM

Evidences of electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies

JOURNAL OF APPLIED PHYSICS

DANIELS KM, DAAS BK, SRIVASTAVA N, WILLIAMS C, FEENSTRA RM, SUDARSHAN TS, CHANDRASHEKHAR MVS

Graphene formed on SiC under various environments: comparison of Si-face and C-face

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SRIVASTAVA N, HE GW, LUXMI, MENDE PC, FEENSTRA RM, SUN YG

Interface structure of graphene on SiC(000(1)over-bar)

PHYSICAL REVIEW B

SRIVASTAVA N, HE GW, LUXMI, FEENSTRA RM

Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces

PHYSICAL REVIEW B

LUXMI, SRIVASTAVA N, HE G, FEENSTRA RM, FISHER PJ

Thickness monitoring of graphene on SiC using low-energy electron diffraction

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A

FISHER PJ, LUXMI, SRIVASTAVA N, NIE S, FEENSTRA RM