国家/地区 Usa（8）
关键词 RADIO FREQUENCY RF（8）
出版物 IEEE ELECTRON DEVIC.（5）
出版时间 2011（5）
机构 IBM TJ WATSO.（2） MIT（2）
作者 HSU A（2） JENKINS KA（2） PALACIOS T（2） WANG H（2）

Multifinger Embedded T-Shaped Gate Graphene RF Transistors With High f(MAX)/f(T) Ratio

IEEE ELECTRON DEVICE LETTERS

HAN SJ, OIDA S, JENKINS KA, LU D, ZHU Y

On the Importance of Bandgap Formation in Graphene for Analog Device Applications

IEEE TRANSACTIONS ON NANOTECHNOLOGY

DAS S, APPENZELLER J

Radio-Frequency Transistors Using Chemical-Vapor-Deposited Monolayer Graphene: Performance, Doping, and Transport Effects

IEEE TRANSACTIONS ON ELECTRON DEVICES

NAYFEH OM

BN/Graphene/BN Transistors for RF Applications

IEEE ELECTRON DEVICE LETTERS

WANG H, TAYCHATANAPAT T, HSU A, WATANABE K, TANIGUCHI T, JARILLOHERRERO P, PALACIOS T

Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance

IEEE ELECTRON DEVICE LETTERS

HSU A, WANG H, KIM KK, KONG J, PALACIOS T

Assessment of high-frequency performance limits of graphene field-effect transistors

NANO RESEARCH

CHAUHAN J, GUO J

Dual-Gate Graphene FETs With f(T) of 50 GHz

IEEE ELECTRON DEVICE LETTERS

LIN YM, CHIU HY, JENKINS KA, FARMER DB, AVOURIS P, VALDESGARCIA A

Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

IEEE ELECTRON DEVICE LETTERS

MOON JS, CURTIS D, HU M, WONG D, MCGUIRE C, CAMPBELL PM, JERNIGAN G, TEDESCO JL, VANMIL B, MYERSWARD R, EDDY C, GASKILL DK