国家/地区 Usa（7）
关键词 FIELD EFFECT TRANSI.（2） FULLERENE DEVICE（2） GRAPHENE（2）
出版物 APPLIED PHYSICS LETTERS（7）
出版时间 2012（7）
机构 UNIV TEXAS AUSTIN（7）
作者 AKINWANDE D（4） RUOFF RS（3） CORBET CM（2） HAO YF（2）
LEE J（2） PARRISH KN（2） TAO L（2） TUTUC E（2）

Multi-finger flexible graphene field effect transistors with high bendability

APPLIED PHYSICS LETTERS

LEE J, TAO L, PARRISH KN, HAO YF, RUOFF RS, AKINWANDE D

Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

APPLIED PHYSICS LETTERS

MOVVA HCP, RAMON ME, CORBET CM, SONDE S, CHOWDHURY SF, CARPENTER G, TUTUC E, BANERJEEL SK

An exactly solvable model for the graphene transistor in the quantum capacitance limit

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

Hybrid graphene/organic semiconductor field-effect transistors

APPLIED PHYSICS LETTERS

HA TJ, AKINWANDE D, DODABALAPUR A

Detection of sulfur dioxide gas with graphene field effect transistor

APPLIED PHYSICS LETTERS

REN YJ, ZHU CF, CAI WW, LI HF, JI HX, KHOLMANOV I, WU YP, PINER RD, RUOFF RS

Embedded-gate graphene transistors for high-mobility detachable flexible nanoelectronics

APPLIED PHYSICS LETTERS

LEE J, TAO L, HAO YF, RUOFF RS, AKINWANDE D

Scaling of Al2O3 dielectric for graphene field-effect transistors

APPLIED PHYSICS LETTERS

FALLAHAZAD B, LEE K, LIAN G, KIM S, CORBET CM, FERRER DA, COLOMBO L, TUTUC E