国家/地区 Usa（8） Japan（3） China（2）
关键词 FIELD EFFECT TRANSISTOR（15）
出版物 APPLIED PHYSICS LETTERS（15）
出版时间 2010（15）
机构
作者 ZHU J（2）

Aperiodic conductivity oscillations in quasiballistic graphene heterojunctions

APPLIED PHYSICS LETTERS

BEGLIARBEKOV M, SUL O, AI N, YANG EH, STRAUF S

Local strain in tunneling transistors based on graphene nanoribbons

APPLIED PHYSICS LETTERS

LU Y, GUO J

Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O-3

APPLIED PHYSICS LETTERS

HONG X, HOFFMAN J, POSADAS A, ZOU K, AHN CH, ZHU J

Graphene field-effect transistors with self-aligned gates

APPLIED PHYSICS LETTERS

FARMER DB, LIN YM, AVOURIS P

Ambipolar graphene field effect transistors by local metal side gates

APPLIED PHYSICS LETTERS

TIAN JF, JAUREGUI LA, LOPEZ G, CAO H, CHEN YP

Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

APPLIED PHYSICS LETTERS

KANG JH, HE Y, ZHANG JY, YU XX, GUAN XM, YU ZP

Charge-density depinning at metal contacts of graphene field-effect transistors

APPLIED PHYSICS LETTERS

NOUCHI R, TANIGAKI K

The effect of traps on the performance of graphene field-effect transistors

APPLIED PHYSICS LETTERS

ZHU J, JHAVERI R, WOO JCS

A high-performance top-gate graphene field-effect transistor based frequency doubler

APPLIED PHYSICS LETTERS

WANG ZX, ZHANG ZY, XU HL, DING L, WANG S, PENG LM

Model of tunneling transistors based on graphene on SiC

APPLIED PHYSICS LETTERS

MICHETTI P, CHELI M, IANNACCONE G