国家/地区 Usa（9）
关键词 GRAPHENE（2）
出版物 JOURNAL OF VACUUM S.（3） APPLIED PHYSICS LET.（2） IEEE ELECTRON DEVIC.（2）
出版时间 2012（10）
机构 USN（5） HRL LABS LLC（2）
作者 GASKILL DK（10）

Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene

MRS BULLETIN

NYAKITI LO, WHEELER VD, GARCES NY, MYERSWARD RL, EDDY CR, GASKILL DK

Investigation of the Epitaxial Graphene/p-SiC Heterojunction

IEEE ELECTRON DEVICE LETTERS

ANDERSON TJ, HOBART KD, NYAKITI LO, WHEELER VD, MYERSWARD RL, CALDWELL JD, BEZARES FJ, JERNIGAN GG, TADJER MJ, IMHOFF EA, KOEHLER AD, GASKILL DK, EDDY CR, KUB FJ

Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection

IEEE ELECTRON DEVICE LETTERS

MOON JS, SEO HC, ANTCLIFFE M, LIN S, MCGUIRE C, LE D, NYAKITI LO, GASKILL DK, CAMPBELL PM, LEE KM, ASBECK P

Ultra-low resistance ohmic contacts in graphene field effect transistors

APPLIED PHYSICS LETTERS

MOON JS, ANTCLIFFE M, SEO HC, CURTIS D, LIN S, SCHMITZ A, MILOSAVLJEVIC I, KISELEV AA, ROSS RS, GASKILL DK, CAMPBELL PM, FITCH RC, LEE KM, ASBECK P

Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures

APPLIED PHYSICS LETTERS

TADJER MJ, ANDERSON TJ, HOBART KD, NYAKITI LO, WHEELER VD, MYERSWARD RL, GASKILL DK, EDDY CR, KUB FJ, CALLE F

Graphene functionalization and seeding for dielectric deposition and device integration

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

GARCES NY, WHEELER VD, GASKILL DK

Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HWANG WS, TAHY K, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, XING HL, SEABAUGH A, JENA D

Bilayer graphene by bonding CVD graphene to epitaxial graphene

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

JERNIGAN GG, ANDERSON TJ, ROBINSON JT, CALDWELL JD, CULBERTSON JC, MYERSWARD R, DAVIDSON AL, ANCONA MG, WHEELER VD, NYAKITI LO, FRIEDMAN AL, CAMPBELL PM, GASKILL DK

Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-kappa dielectrics

CARBON

WHEELER V, GARCES N, NYAKITI L, MYERSWARD R, JERNIGAN G, CULBERTSON J, EDDY C, GASKILL DK

Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas

NANO LETTERS

NYAKITI LO, MYERSWARD RL, WHEELER VD, IMHOFF EA, BEZARES FJ, CHUN H, CALDWELL JD, FRIEDMAN AL, MATIS BR, BALDWIN JW, CAMPBELL PM, CULBERTSON JC, EDDY CR, JERNIGAN GG, GASKILL DK