国家/地区 Korea（5） China（4）
关键词 FIELDEFFECT TRANSISTOR（17）
出版物 ACS APPLIED MATERIA.（3） NANO LETTERS（2） SMALL（2）
出版时间 2015（17）
机构 SUNGKYUNKWAN.（4）
作者 KIM BY（3） LEE NE（3） DANG VQ（2） DUY LT（2）
TRUNG TQ（2）

Suspended graphene devices with local gate control on an insulating substrate

NANOTECHNOLOGY

ONG FR, CUI Z, YURTALAN MA, VOJVODIN C, PAPAJ M, ORGIAZZI JLFX, DENG CQ, BAL M, LUPASCU A

TCAD Simulations of graphene field-effect transistors based on the quantum capacitance effect

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

HAFSI B, BOUBAKER A, ISMAIL N, KALBOUSSI A, LMIMOUNI K

High-Performance Sensors Based on Resistance Fluctuations of Single-Layer-Graphene Transistors

ACS APPLIED MATERIALS INTERFACES

AMIN KR, BID A

Growth Control of ZnO Nanorods on Single-Layer Graphene

SCIENCE OF ADVANCED MATERIALS

KIM BY, JANG M, LEE NE

Tunable Electrical and Optical Characteristics in Mono layer Graphene and Few-Layer MoS2 Heterostructure Devices

NANO LETTERS

RATHI S, LEE I, LIM D, WANG JW, OCHIAI Y, AOKI N, WATANABE K, TANIGUCHI T, LEE GH, YU YJ, KIM P, KIM GH

Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

WU Y, ZOU JJ, HUO S, LU HY, KONG YC, CHEN TS, WU W, XU JX

Fabrication of graphene FETs combined with fluorescence and its Double Read-Out System

SENSORS ACTUATORS BCHEMICAL

YUE WW, JIANG SZ, XU SC, MA Y, BAI CJ

Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties

NANOSCALE RESEARCH LETTERS

CHOI D, KURU C, KIM Y, KIM G, KIM T, CHEN R, JIN S

Ultrahigh Responsivity in Graphene-ZnO Nanorod Hybrid UV Photodetector

SMALL

DANG VQ, TRUNG TQ, KIM DI, DUY LT, HWANG BU, LEE DW, KIM BY, TOAN LD, LEE NE

Highly Transparent and Stretchable Field-Effect Transistor Sensors Using Graphene-Nanowire Hybrid Nanostructures

ADVANCED MATERIALS

KIM J, LEE MS, JEON S, KIM M, KIM S, KIM K, BIEN F, HONG SY, PARK JU