国家/地区 Usa（9）
关键词
出版物 PHYSICAL REVIEW B（4） JOURNAL OF VACUUM S.（2）
出版时间 2012（3） 2010（2） 2013（2）
机构 CARNEGIE MELLON UNIV（9）
作者 SRIVASTAVA N（9）

Formation of a Buffer Layer for Graphene on C-Face SiC{0001}

JOURNAL OF ELECTRONIC MATERIALS

HE GW, SRIVASTAVA N, FEENSTRA RM

Low-energy electron reflectivity of graphene on copper and other substrates

PHYSICAL REVIEW B

SRIVASTAVA N, GAO Q, WIDOM M, FEENSTRA RM, NIE S, MCCARTY KF, VLASSIOUK IV

Low-energy electron reflectivity from graphene

PHYSICAL REVIEW B

FEENSTRA RM, SRIVASTAVA N, GAO Q, WIDOM M, DIACONESCU B, OHTA T, KELLOGG GL, ROBINSON JT, VLASSIOUK IV

Formation of graphene on SiC(000(1)over-bar) surfaces in disilane and neon environments

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HE GW, SRIVASTAVA N, FEENSTRA RM

Graphene formed on SiC under various environments: comparison of Si-face and C-face

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SRIVASTAVA N, HE GW, LUXMI, MENDE PC, FEENSTRA RM, SUN YG

Interface structure of graphene on SiC(000(1)over-bar)

PHYSICAL REVIEW B

SRIVASTAVA N, HE GW, LUXMI, FEENSTRA RM

Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces

PHYSICAL REVIEW B

LUXMI, SRIVASTAVA N, HE G, FEENSTRA RM, FISHER PJ

Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

LUXMI, SRIVASTAVA N, FEENSTRA RM, FISHER PJ

Morphology of graphene on SiC(000(1)over-bar) surfaces

APPLIED PHYSICS LETTERS

LUXMI, FISHER PJ, SRIVASTAVA N, FEENSTRA RM, SUN YG, KEDZIERSKI J, HEALEY P, GU G