国家/地区 Japan（10）
关键词
出版物 JAPANESE JOURNAL OF.（6） APPLIED PHYSICS EXP.（2）
出版时间 2009（4） 2011（4）
机构 HOKKAIDO UNIV（10）
作者 SANO E（10）

Gain enhancement in graphene terahertz amplifiers with resonant structures

JOURNAL OF APPLIED PHYSICS

TAKATSUKA Y, TAKAHAGI K, SANO E, RYZHII V, OTSUJI T

Performance Prediction of Complementary Field-Effect Transistor Circuits Using Graphene with Band Gap Induced by Site-Potential Asymmetry

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Impact of Site-Potential Asymmetry on Electron Transport in Graphene

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E

Monte Carlo Simulation of Ultrafast Electron Relaxation in Graphene

APPLIED PHYSICS EXPRESS

SANO E

Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect

JAPANESE JOURNAL OF APPLIED PHYSICS

TAKATSUKA Y, SANO E, RYZHII V, OTSUJI T

Graphene oxide as dyestuffs for the creation of electrically conductive fabrics

CARBON

FUGETSU B, SANO E, YU HW, MORI K, TANAKA T

Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors

APPLIED PHYSICS EXPRESS

SANO E, OTSUJI T

Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Performance Prediction of Graphene-Channel Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T