国家/地区 Korea（7）
关键词 GRAPHENE（3） CONTACT RESISTANCE（2） DOPING（2）
出版物 ADVANCED MATERIALS（3） ORGANIC ELECTRONICS（2）
出版时间 2016（3）
机构 SUNGKYUNKWAN UNIV（7）
作者 PARK HY（7）

Metal-Graphene Contact Resistance Reduction Through Phosphosilicate Glass-Based n-Type Doping

SCIENCE OF ADVANCED MATERIALS

PARK HY, PARK JH

Poly-4-vinylphenol and poly(melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics

NANOSCALE

LEE IY, PARK HY, PARK JH, YOO G, LIM MH, PARK J, RATHI S, JUNG WS, KIM J, KIM SW, ROH Y, KIM GH, PARK JH

Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

ORGANIC ELECTRONICS

LEE IY, PARK HY, PARK JH, LEE J, JUNG WS, YU HY, KIM SW, KIM GH, PARK JH

Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene

ADVANCED MATERIALS

NGUYEN VL, PERELLO DJ, LEE S, NAI CT, SHIN BG, KIM JG, PARK HY, JEONG HY, ZHAO J, VU QA, LEE SH, LOH KP, JEONG SY, LEE YH

Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism

ADVANCED MATERIALS

SHIM J, KIM HS, SHIM YS, KANG DH, PARK HY, LEE J, JEON J, JUNG SJ, SONG YJ, JUNG WS, LEE J, PARK S, KIM J, LEE S, KIM YH, PARK JH

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

ADVANCED MATERIALS

PARK HY, JUNG WS, KANG DH, JEON J, YOO G, PARK Y, LEE J, JANG YH, LEE J, PARK S, YU HY, SHIN B, LEE S, PARK JH

Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene

ORGANIC ELECTRONICS

PARK HY, YOON JS, JEON J, KIM J, JO SH, YU HY, LEE S, PARK JH