国家/地区 Brazil（5）
关键词 GRAPHENE（3） DEFECT（2） RAMAN SPECTROSCOPY（2）
出版物
出版时间 2010（3）
机构 UNIV FED MINAS GERAIS（5）
作者 CAPAZ RB（5）

Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies

NANO LETTERS

CANCADO LG, JORIO A, FERREIRA EHM, STAVALE F, ACHETE CA, CAPAZ RB, MOUTINHO MVO, LOMBARDO A, KULMALA TS, FERRARI AC

Measuring disorder in graphene with the G and D bands

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

JORIO A, FERREIRA EHM, MOUTINHO MVO, STAVALE F, ACHETE CA, CAPAZ RB

Raman study of ion-induced defects in N-layer graphene

JOURNAL OF PHYSICSCONDENSED MATTER

JORIO A, LUCCHESE MM, STAVALE F, FERREIRA EHM, MOUTINHO MVO, CAPAZ RB, ACHETE CA

Quantifying ion-induced defects and Raman relaxation length in graphene

CARBON

LUCCHESE MM, STAVALE F, FERREIRA EHM, VILANI C, MOUTINHO MVO, CAPAZ RB, ACHETE CA, JORIO A

Disentangling contributions of point and line defects in the Raman spectra of graphene-related materials

2D MATERIALS

CANCADO LG, DA SILVA MG, FERREIRA EHM, HOF F, KAMPIOTI K, HUANG K, PENICAUD A, ACHETE CA, CAPAZ RB, JORIO A