国家/地区 Usa（9）
关键词
出版物 APPLIED PHYSICS LET.（2） JOURNAL OF PHYSICSC.（2）
出版时间 2012（6） 2011（3）
机构 UNIV FLORIDA（9）
作者 TONGAY S（9）

Strain-induced suppression of weak localization in CVD-grown graphene

JOURNAL OF PHYSICSCONDENSED MATTER

MIAO XC, TONGAY S, HEBARD AF

Improved Transfer of Graphene for Gated Schottky-Junction, Vertical, Organic, Field-Effect Transistors

ACS NANO

LEMAITRE MG, DONOGHUE EP, MCCARTHY MA, LIU B, TONGAY S, GILA B, KUMAR P, SINGH RK, APPLETON BR, RINZLER AG

Current transport across the pentacene/CVD-grown graphene interface for diode applications

JOURNAL OF PHYSICSCONDENSED MATTER

BERKE K, TONGAY S, MCCARTHY MA, RINZLER AG, APPLETON BR, HEBARD AF

High Efficiency Graphene Solar Cells by Chemical Doping

NANO LETTERS

MIAO XC, TONGAY S, PETTERSON MK, BERKE K, RINZLER AG, APPLETON BR, HEBARD AF

Drawing graphene nanoribbons on SiC by ion implantation

APPLIED PHYSICS LETTERS

TONGAY S, LEMAITRE M, FRIDMANN J, HEBARD AF, GILA BP, APPLETON BR

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

PHYSICAL REVIEW X

TONGAY S, LEMAITRE M, MIAO X, GILA B, APPLETON BR, HEBARD AF

Stable hole doping of graphene for low electrical resistance and high optical transparency

NANOTECHNOLOGY

TONGAY S, BERKE K, LEMAITRE M, NASROLLAHI Z, TANNER DB, HEBARD AF, APPLETON BR

Graphene/GaN Schottky diodes: Stability at elevated temperatures

APPLIED PHYSICS LETTERS

TONGAY S, LEMAITRE M, SCHUMANN T, BERKE K, APPLETON BR, GILA B, HEBARD AF

Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping

CARBON

TONGAY S, SCHUMANN T, MIAO X, APPLETON BR, HEBARD AF