国家/地区 China（13）
关键词 GRAPHENE（6） SYNCHROTRON RADIATI.（4） 6HSIC（3）
MOLECULAR BEAM EPIT.（2） SI SUBSTRATE（2）
出版物 ACTA PHYSICA SINICA（2） ACTA PHYSICOCHIMICA.（2） CHINESE PHYSICS LET.（2）
出版时间 2011（5） 2012（4）
机构 UNIV SCI TECHNOL CHINA（13）
作者 XU PS（13）

The optimization of a self-focusing e-beam evaporator for carbon evaporation and the application for graphene growth

SURFACE COATINGS TECHNOLOGY

CHEN S, FAN LL, WANG J, PAN Y, CHEN FH, XU PS, ZOU CW, WU ZY

Carbon flux assisted graphene layer growth on 6H-SiC(000-1) by thermal decomposition

JOURNAL OF APPLIED PHYSICS

LIU ZL, KANG CY, FAN LL, XU PS, ZOU CW

Few-layer graphene growth on 6H-SiC(0001) surface at low temperature via Ni-silicidation reactions

APPLIED PHYSICS LETTERS

KANG CY, FAN LL, CHEN S, LIU ZL, XU PS, ZOU CW

Effect of substrate temperature on few-layer graphene grown on Al2O3 (0001) via direct carbon atoms deposition

SOLID STATE COMMUNICATIONS

LIU ZL, TANG J, KANG CY, ZOU CW, YAN WS, XU PS

Growth and characterization of graphene on SiO2/Si substrate

ACTA PHYSICA SINICA

KANG CY, TANG J, LI LM, YAN WS, XU PS, WEI SQ

In situ study on the electronic structure of graphene grown on 6H-SiC (0 0 0 (1)over-bar) with synchrotron radiation photoelectron spectroscopy

APPLIED SURFACE SCIENCE

KANG CY, TANG J, LI LM, PAN HB, XU PS, WEI SQ, CHEN XF, XU XG

Direct Graphene Growth by Depositing Carbon Atoms on Si Substrate Covered by SiC Buffer Layers

ACTA PHYSICOCHIMICA SINICA

TANG J, KANG CY, LI LM, XU PS

Growth of Few-Layer Graphene on Sapphire Substrates by Directly Depositing Carbon Atoms

CHINESE PHYSICS LETTERS

KANG CY, TANG J, LIU ZL, LI LM, YAN WS, WEI SQ, XU PS

Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

TANG J, KANG CY, LI LM, YAN WS, WEI SQ, XU PS

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

JOURNAL OF INORGANIC MATERIALS

LI LM, TANG J, KANG CY, PAN GQ, YAN WS, WEI SQ, XU PS