国家/地区 Japan（2） Korea（2）
关键词 GRAPHENE（3） 2D MATERIAL（2） BAND GAP（2）
BILAYER GRAPHENE（2） HEXAGONAL BORON NIT.（2）
出版物 ACS APPLIED MATERIALS INTERFACES（6）
出版时间 2018（3） 2016（2）
机构 UNIV TEXAS A.（2）
作者 WATANABE K（6）

Bubble-Free Transfer Technique for High-Quality Graphene/Hexagonal Boron Nitride van der Waals Heterostructures

ACS APPLIED MATERIALS INTERFACES

IWASAKI T, ENDO K, WATANABE E, TSUYA D, MORITA Y, NAKAHARAI S, NOGUCHI Y, WAKAYAMA Y, WATANABE K, TANIGUCHI T, MORIYAMA S

Interface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride

ACS APPLIED MATERIALS INTERFACES

LEE K, LIU ES, WATANABE K, TANIGUCHI T, NAH J

Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

ACS APPLIED MATERIALS INTERFACES

UWANNO T, TANIGUCHI T, WATANABE K, NAGASHIO K

Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride

ACS APPLIED MATERIALS INTERFACES

CHOI D, POUDEL N, PARK S, AKINWANDE D, CRONIN SB, WATANABE K, TANIGUCHI T, YAO Z, SHI L

Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride

ACS APPLIED MATERIALS INTERFACES

NEUMANN C, RIZZI L, REICHARDT S, TERRES B, KHODKOV T, WATANABE K, TANIGUCHI T, BESCHOTEN B, STAMPFER C

Study of Graphene-based 2D-Heterostructure Device Fabricated by All-Dry Transfer Process

ACS APPLIED MATERIALS INTERFACES

TIEN DH, PARK JY, KIM KB, LEE N, CHOI T, KIM P, TANIGUCHI T, WATANABE K, SEO Y