国家/地区 Usa（25）
关键词 GRAPHENE（7） FIELD EFFECT TRANSI.（2） FULLERENE DEVICE（2）
ORGANIC FIELD EFFEC.（2） TRANSMISSION ELECTR.（2）
出版物 APPLIED PHYSICS LETTERS（25）
出版时间 2012（7） 2009（4） 2013（4） 2011（3） 2014（3） 2010（2）
机构 UNIV TEXAS AUSTIN（25）
作者 AKINWANDE D（12） RUOFF RS（10） PARRISH KN（7） PINER RD（5）
TAO L（5） CAI WW（4） CHOWDHURY SF（4） TUTUC E（4）
BANERJEE SK（3） COLOMBO L（3） CORBET CM（3） KIM S（3）
LEE J（3） LI HF（3） MOVVA HCP（3） ZHU YW（3）
DODABALAPUR .（2） FALLAHAZAD B（2） HAO YF（2） JI HX（2）

Improvement of graphene field-effect transistors by hexamethyldisilazane surface treatment

APPLIED PHYSICS LETTERS

CHOWDHURY SF, SONDE S, RAHIMI S, TAO L, BANERJEE S, AKINWANDE D

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

APPLIED PHYSICS LETTERS

SANNE A, MOVVA HCP, KANG S, MCCLELLAN C, CORBET CM, BANERJEE SK

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

APPLIED PHYSICS LETTERS

RAMON ME, MOVVA HCP, CHOWDHURY SF, PARRISH KN, RAI A, MAGNUSON CW, RUOFF RS, AKINWANDE D, BANERJEE SK

Inductively heated synthesized graphene with record transistor mobility on oxidized silicon substrates at room temperature

APPLIED PHYSICS LETTERS

TAO L, LEE J, LI HF, PINER RD, RUOFF RS, AKINWANDE D

Non-destructive and rapid evaluation of chemical vapor deposition graphene by dark field optical microscopy

APPLIED PHYSICS LETTERS

KONG XH, JI HX, PINER RD, LI HF, MAGNUSON CW, TAN C, ISMACH A, CHOU H, RUOFF RS

Faraday rotation in magnetically biased graphene at microwave frequencies

APPLIED PHYSICS LETTERS

SOUNAS DL, SKULASON HS, NGUYEN HV, GUERMOUNE A, SIAJ M, SZKOPEK T, CALOZ C

"Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers" (vol 99, 223512, 2011)

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

Multi-finger flexible graphene field effect transistors with high bendability

APPLIED PHYSICS LETTERS

LEE J, TAO L, PARRISH KN, HAO YF, RUOFF RS, AKINWANDE D

Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

APPLIED PHYSICS LETTERS

MOVVA HCP, RAMON ME, CORBET CM, SONDE S, CHOWDHURY SF, CARPENTER G, TUTUC E, BANERJEEL SK

An exactly solvable model for the graphene transistor in the quantum capacitance limit

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D