国家/地区 China（3）
关键词 SEMICONDUCTING IIIV MATERIAL（7）
出版物 JOURNAL OF CRYSTAL GROWTH（7）
出版时间 2020（2） 2021（2）
机构
作者

Influence of nitridation on III-nitride films grown on graphene/quartz substrates by plasma-assisted molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH

YU JD, HAO ZB, DENG J, YU WY, WANG L, LUO Y, WANG J, SUN CZ, HAN YJ, XIONG B, LI HT

Origin of microstructural defects in single-crystalline films van der Waals epitaxy on graphene

JOURNAL OF CRYSTAL GROWTH

LIU Y, XU Y, CAO B, LI ZY, ZHAO E, YANG S, WANG CH, WANG JF, XU K

MOVPE growth of semipolar III-nitride semiconductors on CVD graphene

JOURNAL OF CRYSTAL GROWTH

GUPTA P, RAHMAN AA, HATUI N, GOKHALE MR, DESHMUKH MM, BHATTACHARYA A

Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

JOURNAL OF CRYSTAL GROWTH

ALASKAR Y, ARAFIN S, LIN QY, WICKRAMARATNE D, MCKAY J, NORMAN AG, ZHANG Z, YAO LC, DING F, ZOU J, GOORSKY MS, LAKE RK, ZURBUCHEN MA, WANG KL

Low angle incidence microchannel epitaxy of GaN using graphene as a mask

JOURNAL OF CRYSTAL GROWTH

TAKENAKA S, KATO D, MARUYAMA T, NARITSUKA S

Preparation of large area graphene on SiC(000-1) by moderate vacuum technology

JOURNAL OF CRYSTAL GROWTH

ZHAO XD, DENG X, LI MY, WANG YM, MAO KL, YANG YB, ZHANG MD

Remote epitaxy of In(x)Ga1-As-x (001) on graphene covered GaAs (001) substrates

JOURNAL OF CRYSTAL GROWTH

HENKSMEIER T, SCHULZ JF, KLUTH E, FENEBERG M, GOLDHAHN R, SANCHEZ AM, VOIGT M, GRUNDMEIER G, REUTER D