国家/地区 Japan（2） Usa（2）
关键词 GRAPHENE（7）
出版物 MICROELECTRONIC ENGINEERING（10）
出版时间 2013（10）
机构
作者

Electrical properties and reliability of networked-nanographite wires grown on SiO2 dielectric without catalysts for multi-layer graphene interconnects

MICROELECTRONIC ENGINEERING

SATO M, OGAWA S, INUKAI M, IKENAGA E, MURO T, TAKAKUWA Y, NIHEI M, YOKOYAMA N

Gate capacitance modeling and width-dependent performance of graphene nanoribbon transistors

MICROELECTRONIC ENGINEERING

KLIROS GS

Buckling suspended graphene nanoribbons to harvest energy from noisy vibrations

MICROELECTRONIC ENGINEERING

LOPEZSUAREZ M, RURALI R, ABADAL G

A carbon riveted Pt/Graphene catalyst with high stability for direct methanol fuel cell

MICROELECTRONIC ENGINEERING

LIU XW, DUAN JL, CHEN HL, ZHANG YF, ZHANG XL

Ultra-violet laser processing of graphene on SiO2/Si

MICROELECTRONIC ENGINEERING

WAKAYA F, KURIHARA T, ABO S, TAKAI M

Novel multi-bit memory device using metal/PVDF-TrFE/graphene stack

MICROELECTRONIC ENGINEERING

HWANG HJ, YANG JH, KANG SC, CHO C, KANG CG, LEE YG, LEE BH

Barrier engineering for double layer CVD graphene tunnel FETs

MICROELECTRONIC ENGINEERING

ROY T, HESABI ZR, JOINER CA, FUJIMOTO A, VOGEL EM

Modeling, simulation and design of the vertical Graphene Base Transistor

MICROELECTRONIC ENGINEERING

DRIUSSI F, PALESTRI P, SELMI L

Synthesis of carbon nanotubes and graphene for VLSI interconnects

MICROELECTRONIC ENGINEERING

ROBERTSON J, ZHONG G, ESCONJAUREGUI S, ZHANG C, HOFMANN S

Variation of switching mechanism in TiO2 thin film resistive random access memory with Ag and graphene electrodes

MICROELECTRONIC ENGINEERING

HU YS, PERELLO D, YUN M, KWON DH, KIM M