国家/地区 美国（5） 韩国（4） 世界知识产权组织（2）
IPC部 B（5）
IPC大类 B32（5） B82（5） C01（5）
C23（4） H01（2）
IPC小类 B32B（5）
IPC C01B031/02（5）
发明人 CHOI J（5）
公开年 2012（4）
申请年 2012（5）
专利权人 SAMSUNG ELEC.（3） UNIV SUNGKYU.（2）

Method for forming graphene on substrate used in mechanical system, involves forming solution processed graphene on substrate so as to establish low friction wear surface.

SUMANT A V, ERDEMIR A, CHOI J, BERMAN D

Preparing graphene-layered structure e.g. epitaxial structure that is useful in e.g. transistor, by implanting nitrogen and oxygen ions on surface of silicon carbide thin film to form ion implantation layer and heat treating the film.

SHIN H, CHOI J, AHN J, SEO J, AHN J R, CHOI J Y, SEO J T, SHIN H J

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Graphene transferring method, involves adhering heat exfoliation sheet with target substrate, and pressurizing heat exfoliation sheet pressurized with graphene according to atmospheric condition.

HONG B H, CHOI J, KIM Y, KIM K S, KANG J, KIM H, CHOI J B