国家/地区 美国（10） 韩国（9） 中国（2） 欧洲专利局（EPO）（2） 日本（2）
IPC部 B（9） C（8） H（8）
G（2）
IPC大类 B82（9） C01（7） H01（7）
B32（4） B01（3） C23（3）
IPC小类 B82Y（9） C01B（7） H01L（7）
B32B（4） C23C（3） H01B（3）
B01J（2）
IPC B82Y030/00（7） B82Y040/00（5） C01B031/02（5）
H01L029/16（5） B82Y099/00（4） C01B031/04（4）
C23C016/26（3） H01B001/04（3） H01L021/20（3）
H01L029/06（3） H01L029/78（3） B32B018/00（2）
B32B037/02（2） B82Y010/00（2） H01L021/02（2）
发明人 CHOI J（7） CHOI J Y（6） SHIN H J（6）
SHIN H（5） YOON S（4） WOO Y（3）
WOO Y S（3） YOON S M（3） AHN J（2）
AHN J R（2）
公开年 2012（10）
申请年 2012（10）
专利权人 SAMSUNG ELECTRONICS CO LTD（10）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Preparing graphene-layered structure e.g. epitaxial structure that is useful in e.g. transistor, by implanting nitrogen and oxygen ions on surface of silicon carbide thin film to form ion implantation layer and heat treating the film.

SHIN H, CHOI J, AHN J, SEO J, AHN J R, CHOI J Y, SEO J T, SHIN H J

Graphene-on-substrate, useful as transparent electrode of e.g. transistor, comprises substrate, first intermediate layer disposed on substrate, graphene disposed on first layer, and second intermediate layer disposed on graphene.

WOO Y, CHOI J, SHIN H, YOON S, WOO Y S, CHOI J Y, SHIN H J, YOON S M

Graphene electronic device e.g. FET, has graphene channel layer formed on gate insulating layer, source electrode formed on end of graphene channel layer, and drain electrode formed on another end of graphene channel layer.

SONG H, CHO B, SEO S, SHIN W, SONG H J, CHO B J, SEO S A, SHIN W C, SONG C, SIN W

Ferromagnetic graphene for spin valve device, comprises ferromagnetic graphene having ferromagnetic characteristics and antidote(s) in ferromagnetic graphene.

LEE S, LEE S H

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Separation membrane used in e.g. sea-water desalination apparatus and gas separation apparatus, comprises polymer support e.g. polysulfone and graphene (containing grains defined by grain boundaries) on the polymer support.

CHOI J, PARK H, CHOI J Y, PARK H B

Three-dimensional graphene structure useful as next-generation material for electronic device e.g. display device and transparent electrode for solar cell comprises a layer of graphene having periodically repeated three-dimensional shape.

SHIN H, CHOI J, PARK J, AHN J, AHN J R, CHOI J Y, PARK J H, SHIN H J

Method for transferring graphene sheet to device involves forming binder layer on graphene sheet on which carbonization catalyst is formed, exfoliating carbonization catalyst and transferring graphene sheet to device.

SHIN H J, CHOI J, YOON S