国家/地区 中国（4）
IPC部 C（3） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/04（2） H01L021/02（2）
发明人 LI T（4）
公开年 2014（4）
申请年 2013（4）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（4）

Preparation of sulfur-doped graphene by placing graphene in chemical vapor deposition reaction chamber, carrying out inert gas aeration and exhaust treatment, introducing sulfur source, and introducing hydrogen and inert gas atmosphere.

LI T, LIANG C, WANG Y

Preparing sulfur doped graphene using chemical vapor deposition method comprises e.g. providing metal substrate, placing in chemical vapor deposition reaction chamber, introducing inert gas, carrying out aeration and exhaust gas treatment.

LI T, LIANG C, WANG Y

Method for transferring graphene into flexible substrate, involves coating flexible substrate with glue, attaching flexible substrate with graphene of raw substrate, and washing graphene substrate or flexible substrate and hard substrate.

LI T, LIANG C, WANG W, WANG Y

Transferring graphene to intermediate layer used for preparing graphene electric device, involves mixing polydimethylsiloxane glue with raw substrate, where polydimethylsiloxane glue is solidified into polydimethylsiloxane transition layer.

LI T, LIANG C, WANG W, WANG Y