国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 WANG J（4）
公开年 2014（4）
申请年 2013（4）
专利权人 SICC SCI TECHNOLOGY CO LTD（4）

Graphene preparation graphite bucket comprises bucket body, groove, block and hot reflection screen.

GAO Y, SONG J, WANG J, ZHANG H

Graphene preparation quartz heating cavity comprises opening cavity, top cover, temperature measuring window, air inlet, air outlet, cooling water exit, cooling water inlet, and insulating layer.

GAO Y, SONG J, WANG J, ZHANG H

Silicon carbide substrate graphene production device includes quartz heating cavity, heating cavity inner bucket, heating chamber, opening cavity, top cover, temperature measuring window, air inlet, air outlet and cooling water exit.

GAO Y, SONG J, WANG J, ZHANG H

Preparation of graphene used for manufacturing semiconductor device involves taking graphite in hot reflecting screen of barrel and controlling silicon atom and carbon atom in silicon carbide substrate surface sublimation.

GAO Y, SONG J, WANG J, ZHANG H