国家/地区 日本（9）
IPC部 B（9）
IPC大类 C01（9）
IPC小类 C01B（9） C23C（9） B82Y（6）
B32B（4） H01L（4） B05D（2）
C01G（2） C07C（2） H01B（2）
H01G（2） H01M（2） H05K（2）
IPC C01B031/02（8） C23C016/26（8） B82Y030/00（6）
C01B031/04（6） B82Y040/00（5） C01B032/186（5）
B32B009/00（4） C23C016/02（4） C23C014/06（3）
H01L021/205（3） H01L021/31（3） B05D005/12（2）
B32B015/04（2） C01B032/15（2） C01B032/18（2）
发明人 GUO S（2） MARTENS R I（2） OZKAN C S（2）
OZKAN M（2） WANG W（2）
公开年 2013（6） 2015（3）
申请年 2013（9）
专利权人 GUO S（2） OZKAN C S（2） OZKAN M（2） TE CONNECTIV.（2）
TYCO ELECTRO.（2） UNIV CALIFOR.（2） WANG W（2）

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Energy device used in supercapacitor application, comprises porous metal substrate, graphene layer deposited onto surface of porous metal substrate, carbon nanotubes, and metal oxide nanostructures.

WANG W, GUO S, OZKAN C S, OZKAN M

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Method for manufacturing electrical conductor, involves depositing boundary cappings on defects of graphene layer to inhibit corrosion of the substrate layer at defects and depositing boundary capping material on substrate layer.

LIU Z, ZHENG M, MARTENS R I, MARTENS R

Manufacturing electrical conductor used in e.g. cables and printed circuit boards involves providing base substrate; providing foil; depositing graphene layer on foil to define layered structure; and depositing structure on base substrate.

MARTENS R I

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Preparing graphene for photovoltaic cells involves annealing catalyst substrate in hydrogen gas within chemical vapor deposition chamber at atmospheric pressure and exposing it to gas mixture of hydrocarbon/hydrogen having specific pressure.

VLASSIOUK I V, SMIRNOV S N, PETER W H, SABAU A S, DAI S, FULVIO P F, IVANOV I N, LAVRIK N V, DATSKOS P G