国家/地区 美国（5）
IPC部 H（5） B（2） G（2）
IPC大类 H01（4） B32（2） G06（2）
IPC小类 H01L（3） B32B（2） G06F（2）
IPC B32B027/28（2） G06F003/041（2） H01L021/02（2）
H01L021/336（2） H01L027/12（2） H01L029/49（2）
H01L029/51（2） H01L029/66（2） H01L029/786（2）
发明人
公开年 2016（3） 2015（2）
申请年 2015（5）
专利权人 BOE TECHNOLOGY GROUP CO LTD（5）

Method for preparing graphene conductive film for flexible touch device, involves growing graphene layer on metal-catalyzed base, and coating polyamic acid solution layer on graphene layer, where polyimide film is formed by thermal curing.

DI Y

Thin film transistor preparation method, involves forming grid electrode by graphene, forming first oxidation graphene material layer in grid electrode, and forming second oxidation graphene material layer in grate insulation layer.

ZHANG D, DONG W, HOU D

Low-temperature polycrystalline silicon thin film transistor, useful in array substrate of display panel, has active layer, source electrode, drain electrode, gate electrode, gate insulating layer, and oxidized graphene layer.

ZHANG S, ZHAN Y, CHAN Y

Touch screen for touch display device, has electrode layer fixed with light source that is arranged with insulation layer, and transparent thin film photovoltaic battery fixed with n-type doped graphene layer and p-type doped graphene layer.

HU M, YANG Z, ZENG T, DING X, ZHU X, XIE T

Method for packaging OLED device, involves performing copper foil separation process to form copper foil on graphene thin film, and performing OLED device packaging process to adopt graphene thin film that is arranged in OLED device.

FENG X, QIU Y, WANG T