国家/地区 中国（4）
IPC部 C（2） H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 JIANG M（4）
公开年 2016（3）
申请年 2016（4）
专利权人 SHANGHAI INS.（3）

Preparation of graphene/nylon-6 composite material for e.g. electronic appliance, involves heating caprolactam to melt, adding 6-aminocaproic acid to obtain caprolactam solution, adding graphite, ultrasonically processing, and heating.

ZHOU Z, GUO Y, MEMG F, HUANG F, XU X, JIANG M, MEI Y, MENG F

Quantum interference device structure for use in sensors and other devices, comprises first superconductor layer and first dielectric layer, graphene layer, second dielectric layer, metal layer and second superconducting layers.

WANG H, XIE H, LI L, YANG P, XIE X, JIANG M

Method for preparing quantum hall device, involves forming superconducting thin film layer on substrate, covering with dielectric thin film layer, and forming graphene layer, followed by forming metal electrode.

WANG H, XIE H, WANG X, XIE X, JIANG M

Preparation of metal vapor auxiliary layer rapid growth graphene comprises taking copper-nickel alloy substrate, washing, placing in chemical vapor deposition chamber, positioning, sparging with argon and methane, and growing.

JIANG M, LU G, XIE X, YANG C, WU T, ZHANG X, WANG H