国家/地区 中国（4）
IPC部 C（2） H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 WANG H（4）
公开年 2016（4）
申请年 2016（4）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（4）

Transferring graphene to target substrate used to obtain multilayer graphene, involves depositing graphene on first substrate, covering graphene with buffer layer and adhering heat release adhesive tape on buffer layer.

CHEN J, WU T, WANG H, XIE X

Quantum interference device structure for use in sensors and other devices, comprises first superconductor layer and first dielectric layer, graphene layer, second dielectric layer, metal layer and second superconducting layers.

WANG H, XIE H, LI L, YANG P, XIE X, JIANG M

Method for preparing quantum hall device, involves forming superconducting thin film layer on substrate, covering with dielectric thin film layer, and forming graphene layer, followed by forming metal electrode.

WANG H, XIE H, WANG X, XIE X, JIANG M

Preparation of metal vapor auxiliary layer rapid growth graphene comprises taking copper-nickel alloy substrate, washing, placing in chemical vapor deposition chamber, positioning, sparging with argon and methane, and growing.

JIANG M, LU G, XIE X, YANG C, WU T, ZHANG X, WANG H